GaAs dragons show their talents

1. The output value of gallium arsenide components in 2011 was 5.8 billion U.S. dollars, which is still much smaller than the semiconductor output of 300 billion yuan. However, the gallium arsenide market CAGR20% in 2011-2015 is much lower than that of semiconductors.

The difference between gallium arsenide raw materials and the most widely used Si raw materials in semiconductor materials is that gallium arsenide raw materials have the characteristics of high frequency, low noise, small power consumption, and small components, and are particularly suitable for PAs, switches, etc. of communication devices. Therefore, as a whole, high-frequency products are almost all applications for gallium arsenide.

Second, the growth momentum of the gallium arsenide market comes from:

(1) 3G market penetration improvement: In 2012, the global 3G mobile phone shipments will continue to grow, coupled with the gradual increase in 4G mobile penetration rate, according to IDC estimates, the entire mobile communications industry demand for GaAs PA will be as high as 4.68 billion, which grew by about 15% over 11 years.

(2) Improvement of WiFi specification: The new-generation Wi-Fi standard 802.11ac will be officially launched in the first half of 2012. 802.11n uses two gallium arsenide PAs and two coffins PA, while 802.11ac uses three to four. The gallium arsenide PA and two coffin PA will drive the growth of the gallium arsenide PA market.

Third, the gallium arsenide supply chain is EPI wafer subtrate, EPI Wafer, Foundry, Package, Testing from upstream and downstream respectively. Basically, it is the same as the field of enamel, with EPI, Foundry, and packaging and testing. In the field of gallium arsenide, EPI Wafer process method includes MBE and MOCVD. If the market share of MBE method and MOCVD method is combined, the market share of IQE is 31% and the market share of new brand is 20%;懋 (market share of 46%) and Triquint (market share of 28%); packaging and testing are similar to those of 矽 domain vendors, including Tongxin, Lingsheng, Riyueguang, Jingyuandian and Qige.

In addition, there are also IDM players in the gallium arsenide market, which are completed in-house from wafer foundry to package testing. The major vendors include Skyworks (20% in the market), RFMD (17% in the city), and TriQuint (17%).

Fourth, in the field of gallium arsenide, EPI Wafer suppliers include: IQE, brand new, Kopin, Hitachi cable and Sumitomo Chemical.

As the MOCVD method has a relatively low-cost mass production capacity, gradually replacing the MBE method, and the brand-new company with the highest MOCVD current market share, the market accounted for 27%, while IQE was the largest manufacturer with MBE market share accounting for 75% of the market. .

Fifth, pure foundry business will gradually replace the IDM plant, and the market share of Taiwan's pure foundry market will continue to increase. The steady increase in the number of customers exceeds 60%; the GaAs market provides foundry service providers for stable, TQNT and Aojieke and GCS, 4 companies accounted for 94% of the foundry market, of which only stable Acer and Acer Branch as a pure foundry, TQNT IDM plant (TQNT foundry services only accounted for 16% of their own revenue).

VI. In the first half of 2009 - the first half of 2010, the Chinese market was a cottage machine. At that time, Skyworks was the largest PA supplier for the cottage. As a result, Acerco's performance in 09-10 was excellent (Avistone's largest customer was Skyworks, accounting for revenue. The proportion of 6 and 70%, 2010 AoYike OKYYO 89%), then entered the 2011 cottage market decline, coupled with Skyworks lost iPhone4S market share, and Acer Jieke 2011 revenue also declined 12%.

In addition, the emergence of the iPhone4S as Avago, the market share increased, due to the stability of Avago's HBT process PA only foundry, and Avago revenue accounted for stable 40%, resulting in stable performance in the quarter by quarter in 2011, becoming The best performers in the GaAs population.

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