Detailed explanation: ultra high brightness 4 yuan red LED characteristics

Light-emitting diodes ( LEDs ) convert electrical into direct light, so light-emitting diodes are classified as semiconductor solid-state components.

The LEDs can fully utilize the color filter diaphragm and can directly extract the light of a specific color and the advantages of low voltage driving. At present, it has been widely used as a display light source for various electronic devices, and is applied in various fields. .

In recent years, the luminous efficiency of LEDs has increased, and the practical use of blue and green LEDs, as shown in Figure 1, has become a traffic light, a rear combination lamp, and a liquid crystal display. The backlight module, the main source of various display and illumination, continues to expand the range of applications.


Then, this paper introduces the light loss of the AlGaInP 4 element red light-emitting diode which can reduce the light loss of the LED substrate, and has a metal reflective film layer, high luminance and luminous efficiency which is 4 times that of the conventional structure light-emitting diode and 48 lm/W. Enhancement techniques, as well as various characteristics of the electrical optics of metal reflective film light-emitting diodes (MR-LEDs).

development path

In addition to AlGaAs epitaxial wafers, AlGaInP epitaxial silicon wafers have been commercialized for semiconductor wafers for conventional red light-emitting diodes.

If the electrode is fabricated on the surface of the AlGaInP epitaxial silicon wafer and then cut into a grain shape (Die), the LED chip can be fabricated. However, the conventional structure LED is affected by the bottom substrate, and the light absorption loss is very large. The luminous efficiency of lm/W is the maximum limit of red light emitting diodes.

In view of the fact that the researchers have installed a metal reflective film (MR: Metal Reflector) inside the light-emitting diode assembly, a red light-emitting diode with a new structure has been developed to achieve a luminous efficiency of 48 lm/W, which is four times higher than that of the conventional structure.

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